Evaluation and Design of GaN-Based Gate Driver Architectures for High-Efficiency Inverter Modules

1 settimana fa


Milan, Italia Altro A tempo pieno

Evaluation and Design of GaN‑Based Gate Driver Architectures for High‑Efficiency Inverter ModulesJoin to apply for the Evaluation and Design of GaN‑Based Gate Driver Architectures for High‑Efficiency Inverter Modules role at NXP Semiconductors .Overall purpose: to investigate the feasibility and advantages of Gallium Nitride (GaN) technology for inverter modules compared to SiC MOSFETs and IGBTs. The project is divided into three phases.Phase 1: Technology Analysis and BenchmarkingObjective: conduct an in‑depth study of GaN for inverter applications.Activities:Review state‑of‑the‑art literature and technical papers to understand current trends and advancements in GaN‑based power electronics.Benchmark GaN against SiC and IGBT in terms of switching speed, efficiency, thermal performance, reliability, and cost.Analyze adoption by major OEMs and semiconductor companies.Collaborate with NXP’s Application and Product Definition Team for insights on GaN adoption strategies.Expected Outcome: a comprehensive report summarizing GaN advantages, limitations, and market positioning for inverter modules.Phase 2: Gate Driver Architecture Design for GaNObjective: develop and validate a gate driver architecture optimized for GaN devices.Activities:Address GaN requirements: high‑speed switching, low parasitic inductance, robust protection.Perform analog design: architecture definition, behavioral modeling, simulation, PVT analysis.Ensure manufacturability and reliability standards are met.Support layout design: consider parasitic effects, signal integrity, and layout performance.Expected Outcome: a fully simulated and optimized gate driver ready for prototyping.Phase 3: Bench Characterization and ValidationObjective: validate the performance of a previous‑generation GaN gate driver in NXP’s laboratory.Activities:Conduct bench testing and waveform analysis.Identify critical issues and limitations.Document findings in a detailed characterization report, including measured performance versus simulation and recommendations for improvement.Expected Outcome: a validation report highlighting gaps and providing actionable insights for next‑generation designs.Key DeliverablesLiterature review and benchmarking report on GaN vs. SiC/IGBT technologies.Gate driver architecture design documentation, including simulations and layout considerations.Bench characterization report of the previous‑generation gate driver.Required SkillsAnalog circuit design and simulation (SPICE‑based tools).Layout design (Cadence Virtuoso or equivalent).Power electronics fundamentals.Laboratory measurement techniques (oscilloscopes, power analyzers).Collaboration with cross‑functional teams (Application Engineering, Product Definition).Seniority level: Internship.Employment type: Internship.Job function: Other.Industries: Semiconductor Manufacturing, Computers and Electronics Manufacturing, Software Development.Location: Milan, Lombardy, Italy.Referrals increase your chances of interviewing at NXP Semiconductors by 2×.#J-18808-Ljbffr



  • Milan, Italia Altro A tempo pieno

    Evaluation and Design of GaN‑Based Gate Driver Architectures for High‑Efficiency Inverter Modules Join to apply for theEvaluation and Design of GaN‑Based Gate Driver Architectures for High‑Efficiency Inverter Modulesrole atNXP Semiconductors .Overall purpose: to investigate the feasibility and advantages of Gallium Nitride (GaN) technology for...


  • Milan, Italia Altro A tempo pieno

    A leading semiconductor company in Milan is seeking an intern to work on the evaluation and design of GaN-based gate driver architectures for high-efficiency inverter modules. This internship involves conducting technology analysis, gate driver architecture design, and performance validation. Ideal candidates should have a solid background in analog circuit...


  • Milan, Italia Altro A tempo pieno

    I’m working with a major multinational research centre in Milan that is expanding its high-performance RF/microwave team. They’re looking for a Principal GaN PA Design Engineer to drive next‑generation Gallium Nitride power amplifier development across cellular, base‑station and emerging satellite systems. This is a senior technical role within a...


  • Milan, Italia Altro A tempo pieno

    I’m working with a major multinational research centre in Milan that is expanding its high-performance RF/microwave team. They’re looking for a Principal GaN PA Design Engineer to drive next‑generation Gallium Nitride power amplifier development across cellular, base‑station and emerging satellite systems. This is a senior technical role within a...


  • Milan, Italia Altro A tempo pieno

    I’m working with a major multinational research centre in Milan that is expanding its high-performance RF/microwave team. They’re looking for a Principal GaN PA Design Engineer to drive next‑generation Gallium Nitride power amplifier development across cellular, base‑station and emerging satellite systems. This is a senior technical role within a...

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