NAND Datapath Design Engineer — High-Speed DDR

20 ore fa

Avezzano, Abruzzo, Italia 1460 Micron Semiconductor Ital Tempo pieno 34.000 € - 57.000 € Contratto

Micron Semiconductor Italia is seeking a Design Engineer in the NVE Design Engineering Datapath group to contribute to high‑speed NAND datapath architectures and DDR interfaces.

Se è interessato/a a candidarsi per questo lavoro, la preghiamo di assicurarsi di soddisfare i seguenti requisiti, elencati di seguito.

You will design, optimize, and validate datapath circuits at block and sub‑system levels, ensuring timing closure and performance in CMOS technologies. xbvzest

Requires MS/PhD in EE and strong background in high‑speed CMOS design, timing, and SI, with experience in SPICE and RTL/Verilog flows.