Evaluation And Design Of Gan-Based Gate Driver Architectures For High-Efficiency Inverter Modules
38 minuti fa
The primary goal of this thesis is to investigate the feasibility and advantages of Gallium Nitride (GaN) technology as a key component in inverter modules compared to existing solutions such as Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs).The work will be divided into three main phases.Phase 1: Technology Analysis and BenchmarkingObjective: Conduct an in-depth study of GaN technology for inverter applications.Activities:Review state-of-the-art literature and technical papers to understand current trends and advancements in GaN-based power electronics.Benchmark GaN against alternative technologies (SiC IGBT) in terms of:Switching speedEfficiencyThermal performanceReliability and cost implicationsAnalyze what major OEMs and semiconductor companies are currently implementing in this domain.Collaborate with NXPs Application and Product Definition Team to gather expert insights and feedback on GaN adoption strategies.Expected Outcome: A comprehensive report summarizing the advantages, limitations and market positioning of GaN technology for inverter modules.Phase 2: Gate Driver Architecture Design for GaNObjective: Develop and validate a gate driver architecture optimized for GaN devices.Activities:Focus on GaNagoza requirements:High-speed switchingLow parasitic inductanceRobust protection mechanismsPerform analog design activities including:Architecture definition and evaluationBehavioral modeling and simulationPVT (Process Voltage Temperature) analysisAddress industrialization aspects ensuring the design meets manufacturability and reliability standards.Supervise and support layout design activities considering:Parasitic effectsSignal integrityImpact of layout on performanceExpected Outcome: A fully simulated and optimized gate driver architecture for GaN ready for prototyping.Phase 3: Bench Characterization and ValidationObjective: Validate the performance of a previous-generation GaN gate driverPoz in NXPs laboratory environment.Activities:Perform hands-on bench testing and waveform analysis.Identify critical issues and limitations in the existing design.Document findings in a detailed characterization report including:Measured performance vs. simulated expectationsRecommendations for improvementExpected Outcome: A complete validation report highlighting gaps and providing actionable insights for next-generation designs.Key DeliverablesLiterature review and benchmarking report on GaN vs. SiC/IGBT technologies.Gate driver architecture design documentation including simulations and layout considerations.Bench characterization report of the previous-generation gate driver.Required SkillsAnalog circuit design and simulation (SPICE-based tools)Layout design (Cadence Virtuoso or equivalent)Power electronics fundamentalsLaboratory measurement techniques (oscilloscopes, power analyzers)Collaboration with cross-functional teams (Application Engineering, Product Definition)More information about NXP in Italy...#J-*****-Ljbffr
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Lazio, Italia Nxp Semiconductors A tempo pienoA leading semiconductor company is looking for a researcher to investigate Gallium Nitride (GaN) technology for inverter modules.The role involves conducting a comprehensive technology analysis, designing an optimized gate driver architecture for GaN devices, and validating performance through bench testing.Candidates should have strong skills in analog...
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