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Evaluation and Design of GaN-Based Gate Driver Architectures for High-Efficiency Inverter Modules
2 settimane fa
The primary goal of this thesis is to investigate the feasibility and advantages of Gallium Nitride (GaN) technology as a key component in inverter modules, compared to existing solutions such as Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) .
The work will be divided into three main phases :
Phase 1: Technology Analysis and BenchmarkingObjective:
Conduct an in-depth study of GaN technology for inverter applications.
Activities:
- Review state-of-the-art literature and technical papers to understand current trends and advancements in GaN-based power electronics.
- Benchmark GaN against alternative technologies (SiC, IGBT) in terms of:
- Switching speed
- Efficiency
- Thermal performance
- Reliability and cost implications
- Analyze what major OEMs and semiconductor companies are currently implementing in this domain.
- Collaborate with NXP's Application and Product Definition Team to gather expert insights and feedback on GaN adoption strategies.
Expected Outcome:
A comprehensive report summarizing the advantages, limitations, and market positioning of GaN technology for inverter modules.
Objective:
Develop and validate a gate driver architecture optimized for GaN devices.
Activities:
- Focus on GaN requirements:
- High-speed switching
- Low parasitic inductance
- Robust protection mechanisms
- Perform analog design activities, including:
- Architecture definition and evaluation
- Behavioral modeling and simulation
- PVT (Process, Voltage, Temperature) analysis
- Address industrialization aspects, ensuring the design meets manufacturability and reliability standards.
- Supervise and support layout design activities, considering:
- Parasitic effects
- Signal integrity
- Impact of layout on performance
Expected Outcome:
A fully simulated and optimized gate driver architecture for GaN, ready for prototyping.
Objective:
Validate the performance of a previous-generation GaN gate driver in NXP's laboratory environment.
Activities:
- Perform hands-on bench testing and waveform analysis.
- Identify critical issues and limitations in the existing design.
- Document findings in a detailed characterization report, including:
- Measured performance vs. simulated expectations
- Recommendations for improvement
Expected Outcome:
A complete validation report highlighting gaps and providing actionable insights for next-generation designs.
Literature review and benchmarking report on GaN vs. SiC/IGBT technologies. Gate driver architecture design documentation, including simulations and layout considerations. Bench characterization report of previous-generation gate driver.
Required Skills- Analog circuit design and simulation (SPICE-based tools)
- Layout design (Cadence Virtuoso or equivalent)
- Power electronics fundamentals
- Laboratory measurement techniques (oscilloscopes, power analyzers)
- Collaboration with cross-functional teams (Application Engineering, Product Definition)
More information about NXP in Italy...
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