Evaluation And Design Of Gan-Based Gate Driver Architectures For High-Efficiency Inverter Modules

2 settimane fa

Milano, Italia Nxp Semiconductors A tempo pieno

Purpose and ObjectivesThe primary goal of this thesis is to investigate the feasibility and advantages of Gallium Nitride (GaN) technology as a key component in inverter modules, compared to existing solutions such as Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) .The work will be divided into three main phases :Phase 1: Technology Analysis and BenchmarkingObjective:Conduct an in-depth study of GaN technology for inverter applications.Activities:Review state-of-the-art literature and technical papers to understand current trends and advancements in GaN-based power electronics.Benchmark GaN against alternative technologies (SiC, IGBT) in terms of:Switching speedEfficiencyThermal performanceReliability and cost implicationsAnalyze what major OEMs and semiconductor companies are currently implementing in this domain.Collaborate with NXP's Application and Product Definition Team to gather expert insights and feedback on GaN adoption strategies.Expected Outcome:A comprehensive report summarizing the advantages, limitations, and market positioning of GaN technology for inverter modules.Phase 2: Gate Driver Architecture Design for GaNObjective:Develop and validate a gate driver architecture optimized for GaN devices.Activities:Focus on GaN requirements:High-speed switchingLow parasitic inductanceRobust protection mechanismsPerform analog design activities, including:Architecture definition and evaluationBehavioral modeling and simulationPVT (Process, Voltage, Temperature) analysisAddress industrialization aspects, ensuring the design meets manufacturability and reliability standards.Supervise and support layout design activities, considering:Parasitic effectsSignal integrityImpact of layout on performanceExpected Outcome:A fully simulated and optimized gate driver architecture for GaN, ready for prototyping.Phase 3: Bench Characterization and ValidationObjective:Validate the performance of a previous-generation GaN gate driver in NXP's laboratory environment.Activities:Perform hands-on bench testing and waveform analysis.Identify critical issues and limitations in the existing design.Document findings in a detailed characterization report, including:Measured performance vs. simulated expectationsRecommendations for improvementExpected Outcome:A complete validation report highlighting gaps and providing actionable insights for next-generation designs.Key DeliverablesLiterature review and benchmarking report on GaN vs. SiC/IGBT technologies.Gate driver architecture design documentation, including simulations and layout considerations.Bench characterization report of previous-generation gate driver.Required SkillsAnalog circuit design and simulation (SPICE-based tools)Layout design (Cadence Virtuoso or equivalent)Power electronics fundamentalsLaboratory measurement techniques (oscilloscopes, power analyzers)Collaboration with cross-functional teams (Application Engineering, Product Definition)More information about NXP in Italy...LI-****

  • Evaluation and Design of GaN-Based Gate Driver Architectures for High-Efficiency Inverter Modules

    2 settimane fa

    Milano, Italia NXP Semiconductors A tempo pieno

    Evaluation and Design of GaN‑Based Gate Driver Architectures for High‑Efficiency Inverter Modules Join to apply for the Evaluation and Design of GaN‑Based Gate Driver Architectures for High‑Efficiency Inverter Modules role at NXP Semiconductors . Overall purpose: to investigate the feasibility and advantages of Gallium Nitride (GaN) technology for...

  • Evaluation And Design Of Gan-Based Gate Driver Architectures For High-Efficiency Inverter Modules

    2 settimane fa

    Milano, Italia Nxp Semiconductors A tempo pieno

    Evaluation and Design of GaN-Based Gate Driver Architectures for High-Efficiency Inverter ModulesJoin to apply for theEvaluation and Design of GaN-Based Gate Driver Architectures for High-Efficiency Inverter Modulesrole atNXP Semiconductors.Overall purpose: to investigate the feasibility and advantages of Gallium Nitride (GaN) technology for inverter modules...

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    Milano, Italia NXP Semiconductors A tempo pieno

    A leading semiconductor company in Milan is seeking an intern to work on the evaluation and design of GaN-based gate driver architectures for high-efficiency inverter modules. This internship involves conducting technology analysis, gate driver architecture design, and performance validation. Ideal candidates should have a solid background in analog circuit...

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    2 settimane fa

    Milano, Italia Nxp Semiconductors A tempo pieno

    A leading semiconductor company in Milan is seeking an intern to work on the evaluation and design of GaN-based gate driver architectures for high-efficiency inverter modules.This internship involves conducting technology analysis, gate driver architecture design, and performance validation.Ideal candidates should have a solid background in analog circuit...

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