Principal GaN PA Design Engineer

3 settimane fa

Milano, Italia IC Resources A tempo pieno

I'm working with a major multinational research centre in Milan that is expanding its high-performance RF/microwave team. They're looking for a Principal GaN PA Design Engineer to drive next‐generation Gallium Nitride power amplifier development across cellular, base‐station and emerging satellite systems. This is a senior technical role within a well‐funded organisation heavily invested in advanced RF, mmWave and device‐level innovation. Responsibilities Lead transistor‐level GaN PA design, simulation and optimisation for high‐power, high‐efficiency applications Investigate new GaN device technologies, materials and architectures to push performance limits Perform chip‐level trade‐off analysis (link budgets, die size, modulation impacts, device behaviour) Develop and execute test plans, validating designs through lab and field measurements Contribute to patents, technical papers and new research directions within the RF/microwave domain Stay aligned with the latest advances in GaN PA technology, RFIC development and mmWave front‐ends What You'll Need MSc or PhD in Microwave Engineering, Physics, or similar Strong experience designing Gallium Nitride power amplifiers at device and circuit level Proficiency with tools such as ADS, HFSS, Cadence, etc. Understanding of transistor behaviour, device failure mechanisms and PA theory Hands‐on experience with chip measurement, validation and troubleshooting Solid grounding in wireless communication systems and electromagnetic theory Nice To Have Experience taking GaN PA products from concept to product‐level design Published papers or patents in GaN PA, RFIC, mmWave or related areas Environment & Focus Areas The research centre is heavily involved in advanced microwave/mmWave work (E‐Band, W‐Band, D‐Band), antenna technologies, optical/RF front‐end integration, active phased arrays and next‐generation system architectures. You'd join a multidisciplinary team operating at the cutting edge of RF, EM, silicon photonics and high‐frequency ICs. What's On Offer A long‐term career within a globally recognised technology organisation, competitive compensation, and strong opportunities for professional development across Europe and internationally. Location: Milan, Lombardy, Italy. J-18808-Ljbffr

  • Principal GaN PA Design Engineer

    3 settimane fa

    Milano, Italia IC Resources A tempo pieno

    I’m working with a major multinational research centre in Milan that is expanding its high-performance RF/microwave team. They’re looking for a Principal GaN PA Design Engineer to drive next‑generation Gallium Nitride power amplifier development across cellular, base‑station and emerging satellite systems. This is a senior technical role within a...

  • Senior GaN PA Design Engineer

    3 settimane fa

    Milano, Italia IC Resources A tempo pieno

    A leading multinational research centre in Milan is seeking a Principal GaN PA Design Engineer to drive the development of next-generation Gallium Nitride power amplifiers. This senior technical role involves leading design, simulation, and optimisation efforts in high-power applications. The ideal candidate will have a master's or PhD in a relevant field...

  • Senior GaN PA Design Engineer

    3 settimane fa

    Milano, Italia IC Resources A tempo pieno

    A leading multinational research centre in Milan is seeking a Principal GaN PA Design Engineer to drive the development of next-generation Gallium Nitride power amplifiers. This senior technical role involves leading design, simulation, and optimisation efforts in high-power applications. The ideal candidate will have a master's or PhD in a relevant field...

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    2 settimane fa

    Milano, Italia Nxp Semiconductors A tempo pieno

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  • Evaluation And Design Of Gan-Based Gate Driver Architectures For High-Efficiency Inverter Modules

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    Milano, Italia Nxp Semiconductors A tempo pieno

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    Milano, Italia NXP Semiconductors A tempo pieno

    Evaluation and Design of GaN‑Based Gate Driver Architectures for High‑Efficiency Inverter Modules Join to apply for the Evaluation and Design of GaN‑Based Gate Driver Architectures for High‑Efficiency Inverter Modules role at NXP Semiconductors . Overall purpose: to investigate the feasibility and advantages of Gallium Nitride (GaN) technology for...

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    Milano, Italia Nxp Semiconductors A tempo pieno

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    Milano, Italia NXP Semiconductors A tempo pieno

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